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CY670A-BO
Cryogenic Temperature Sensors - Silicon Diodes
Volume discounts available
Volume Discount Schedule
| Quantity | Price each |
|---|---|
| 1-4 | C$1 977.56 |
| 5-9 | C$1 878.68 |
| 10-24 | C$1 839.13 |
| 25-49 | C$1 760.03 |
| 50-99 | C$1 720.48 |
| 100+ | C$1 680.93 |
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Product Specs
<< See all Product Models| Brand |
 |
| Accuracy Band Availability | 1, 2, 3, 4 |
| Applications | Beryllium oxide heat sink block |
| Band Type | Band A |
| Current, Max Note | 1 mA, continuous or 100 mA, pulsed |
| Mounting | Bolt on |
| Number of Wires | 2 |
| Output Signal | Voltage |
| Process Temperature, Max | 226.85 °C |
| Process Temperature, Min | -271.8 °C |
| Recommended Excitation | 10 µA, ± 0.1% |
| Repeatability | ± 10 mK @ 4.2 K |
| Reverse Voltage | 60 V |
| Sensor Height | 3.175 mm |
| Sensor Inner Dia | 2.946 mm |
| Sensor Length | 7.62 mm |
| Sensor Threads | N/A |
| Sensor Width | 8.89 mm |
| Supply Power Effects | 16 µW @ 4.2 K; 10 µW @ 77 K; 5 µW @ 300 K |
| Temperature Sensor Type | Silicon Diode |
| Thermal Response Time | SD Model: Typical <10 ms @; 4.2 K, 100 ms @ 77 K, 200 ms ;@ 305 K;BR Model: 1 ms @ 4.2 K, ;13 ms @ 77 K, 20 ms @ 305 K |
| Use in Magnetic Field Note | Not recommended for use in magnetic field applications below 60 K; low magnetic field dependence when used in fields up to 5 tesla above 60 K |
| Use in Radiation Note | Recommended for use only in low level radiation |
| Wire Diameter | 0.38 mm |
| Wire Length | 19.304 mm |
| See All Specs | |
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